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Swagata Bhattacherjee

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Journal Articles

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2014
[j3]
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Abhijit Biswas, Swagata Bhattacherjee:
Temperature dependent model for threshold voltage and subthreshold slope of strained-Si channel MOSFETs with a polysilicon gate. Microelectron. Reliab. 54(8): 1527-1533 (2014)
2013
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Abhijit Biswas, Swagata Bhattacherjee:
Accurate modeling of the influence of back gate bias and interface roughness on the threshold voltage of nanoscale DG MOSFETs. Microelectron. Reliab. 53(3): 363-370 (2013)
2011
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Swagata Bhattacherjee, Abhijit Biswas:
Performance analysis of long Ge channel double gate (DG) p MOSFETs with high-k gate dielectrics based on carrier concentration formulation. Microelectron. Reliab. 51(6): 1105-1112 (2011)

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