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2020 – today
- 2023
[c8]Kin P. Cheung:
V-Ramp test and gate oxide screening under the "lucky" defect model. IRPS 2023: 1-4- 2022
- [c7]Xiao Lyu, Pragya R. Shrestha, Mengwei Si, Panni Wang, Junkang Li, Kin P. Cheung, Shimeng Yu
, Peide D. Ye:
Determination of Domain Wall Velocity and Nucleation Time by Switching Dynamics Studies of Ferroelectric Hafnium Zirconium Oxide. VLSI Technology and Circuits 2022: 338-339 - 2020
- [c6]Kin P. Cheung:
Anomalous accelerated negative-bias- instability (NBI) at low drain bias. IRPS 2020: 1-3 - [c5]Dmitry Veksler, Gennadi Bersuker, Adam W. Bushmaker, Maribeth Mason, P. R. Shrestha, Kin P. Cheung, Jason P. Campbell, Thomas Rueckes, Lee Cleveland, Harry Luan, David C. Gilmer:
Memory update characteristics of carbon nanotube memristors (NRAM®) under circuitry-relevant operation conditions. IRPS 2020: 1-4
2010 – 2019
- 2019
- [c4]Dmitry Veksler, Gennadi Bersuker, Adam W. Bushmaker, P. R. Shrestha, Kin P. Cheung, Jason P. Campbell:
Switching Variability Factors in Compliance-Free Metal Oxide RRAM. IRPS 2019: 1-5 - 2018
- [c3]Kin P. Cheung, Jason P. Campbell:
Non-tunneling origin of the 1/f noise in SiC MOSFET. ICICDT 2018: 165-168 - [c2]Kin P. Cheung:
SiC power MOSFET gate oxide breakdown reliability - Current status. IRPS 2018: 2 - 2011
- [c1]Jason T. Ryan, Lan Wei, Jason P. Campbell, Ricki G. Southwick, Kin P. Cheung, Anthony S. Oates, H.-S. Philip Wong, John Suehle:
Circuit-aware device reliability criteria methodology. ESSCIRC 2011: 255-258
2000 – 2009
- 2001
- [j2]Kin P. Cheung:
Unifying the thermal-chemical and anode-hole-injection gate-oxide breakdown models. Microelectron. Reliab. 41(2): 193-199 (2001) - [j1]Kin P. Cheung:
Impact of ESD protection device trigger transient on the reliability of ultra-thin gate oxide. Microelectron. Reliab. 41(5): 745-749 (2001)
Coauthor Index
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