"SiC power MOSFET gate oxide breakdown reliability - Current status."

Kin P. Cheung (2018)

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DOI: 10.1109/IRPS.2018.8353545

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type: Conference or Workshop Paper

metadata version: 2019-01-22

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Kin P. Cheung:
SiC power MOSFET gate oxide breakdown reliability - Current status. IRPS 2018: 2

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