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ORCIDAndrey Kosarev
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2010 – 2019
- 2016
[c13]Hiram E. Martinez
, Andrey Kosarev, A. B. Pevtsov, A. V. Zherzdev, N. A. Feoktistov, Y. Kudriavtsev:
High contrast distributed Bragg reflectors based on Si: H/SiC: H PECVD multilayer structure. CCE 2016: 1-4- [c12]Hiram E. Martinez, Svetlana Mansurova, Ismael Cosme, Andrey Kosarev, Darwin Mayorga Cruz:
Determination of photoelectric parameters of hydrogenated amorphous silicon by the photo electromotive-force technique. CCE 2016: 1-4 - [c11]Saraí Vázquez, Antonio Olivares, Ismael Cosme, Svetlana Mansurova, Andrey Kosarev, Adrian Itzmoyotl:
Study of optoelectronics properties of indium tin oxide films fabricated by sputtering in oxygen atmosphere. CCE 2016: 1-5 - [c10]S. Zarate, Ismael Cosme, Andrey Kosarev, Svetlana Mansurova, Adrian Itzmoyotl, Hiram E. Martinez:
Effect of germane in gas phase on electronic properties of GeXSiY: H alloys deposited by RF plasma discharge. CCE 2016: 1-4 - 2015
- [c9]Hiram E. Martinez, Andrey Kosarev, Y. Kudriavtsev:
SIMS analysis of atomic composition of silicon-germanium films deposited by RF plasma discharge. CCE 2015: 1-3 - [c8]Hiram E. Martinez, Carlos Ospina, Andrey Kosarev:
Effect of hydrogen dilution on morphology and electronic properties of silicon-germanium films deposited by RF plasma discharge. CCE 2015: 1-6 - [c7]Antonio Olivares, Ismael Cosme, Svetlana Mansurova, Andrey Kosarev, Hiram E. Martinez:
Study of electrical conductivity of PEDOT: PSS at temperatures >300 K for hybrid photovoltaic applications. CCE 2015: 1-3 - [c6]Antonio Olivares, Hiram E. Martinez, Ismael Cosme, Svetlana Mansurova, Andrey Kosarev:
Effect of frontal interface configuration on electronic properties of organic-inorganic hybrid solar cells. CCE 2015: 1-4 - [c5]Carlos Ospina, Andrey Kosarev:
Evolution of morphological characteristics of Si: H p-i-n structures deposited by plasma on "corning" substrates. CCE 2015: 1-5 - 2014
- [c4]Hiram E. Martinez-Mateo, Andrey Kosarev:
Effect of transparent conductive oxide material and frontal interface on characteristics of Si: H p-i-n junction. CCE 2014: 1-4 - [c3]Carlos Ospina, Andrey Kosarev:
Study of morphological characteristics of Si: H p-i-n structures deposited by plasma on plastic substrates. CCE 2014: 1-6 - 2011
- [c2]Ismael Cosme, Andrey Kosarev, Francisco Temoltzi, Adrian Itzmoyotl:
Electronic properties of GeySi1-y: H films deposited by LF PECVD at low temperatures. CCE 2011: 1-4 - [c1]Ismael Cosme, Andrey Kosarev, Francisco Temoltzi, Adrian Itzmoyotl:
Study of doping of Ge0.96Si0.04: H films with B, and P during low frequency plasma deposition at low temperature. CCE 2011: 1-3
Coauthor Index
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