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Xiangliang Jin
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2020 – today
- 2024
- [j14]Nianbo Shi, Jian Yang, Zhixiang Cao, Xiangliang Jin:
A Programmable Ambient Light Sensor with Dark Current Compensation and Wide Dynamic Range. Sensors 24(11): 3396 (2024) - 2023
- [j13]Duocai Peng, Xiangliang Jin:
Analysis and Design of High Performance Analog Switch Circuit Based on 0.25 μm BCD Process. Circuits Syst. Signal Process. 42(4): 1893-1910 (2023) - 2022
- [j12]Jian Yang, Xiangliang Jin, Yan Peng, Jun Luo:
Design and Analysis of High-Precision Weighted Linear Least-Squares Fitting Algorithm for Fluorescent Optical Fiber Temperature Sensor. J. Circuits Syst. Comput. 31(2): 2250031:1-2250031:22 (2022) - [j11]Yang Wang, Xiangliang Jin, Jian Yang, Feng Yan, Yujie Liu, Yan Peng, Jun Luo, Jun Yang:
Design and optimization of a gate-controlled dual direction electro-static discharge device for an industry-level fluorescent optical fiber temperature sensor. Frontiers Inf. Technol. Electron. Eng. 23(1): 158-170 (2022) - 2021
- [j10]Zeyu Zhong, Yang Wang, Xiangliang Jin, Yan Peng, Jun Luo, Jun Yang:
Analysis of current aggregation in gate-control dual direction silicon controlled rectifier. IEICE Electron. Express 18(13): 20210214 (2021) - [j9]Jianxiu Hao, Xiangliang Jin, Bo Peng:
A Novel Bipolar Photon-Controlled Generalized Memristor Based on Avalanche Photodiode. J. Circuits Syst. Comput. 30(5): 2150090:1-2150090:18 (2021) - [j8]Yang Wang, Xiangliang Jin, Meiling Zeng, Yan Peng, Jun Luo:
Electric-field-drive single photon avalanche diode with barrier enhancement for fluorescence detection. Microelectron. J. 115: 105161 (2021) - 2020
- [j7]Yang Wang, Xiangliang Jin, Yan Peng, Jun Luo, Zeyu Zhong, Jun Yang:
Analysis of High-Failure Mechanism Based on Gate-Controlled Device for Electro-Static Discharge Protection. IEEE Access 8: 217213-217221 (2020) - [j6]Yang Wang, Liqiang Ding, Zhanying Bao, Hongjiao Yang, Xiangliang Jin:
High current operational amplifier with current limiting protection circuit. IET Circuits Devices Syst. 14(2): 251-259 (2020) - [j5]Kan Li, Xiao Xiao, Xiangliang Jin, Yuanjin Zheng:
A 600-mA, Fast-Transient Low-Dropout Regulator With Pseudo-ESR Technique in 0.18- m CMOS Process. IEEE Trans. Very Large Scale Integr. Syst. 28(2): 403-413 (2020) - [c12]Liang Xie, Zhaoxi Li, Jianlin Feng, Xiangliang Jin:
Design and Implementation of a Low-Power Cyclic ADC for X-Ray Detector Readout Circuit. ICCT 2020: 1002-1006 - [c11]Liang Xie, Jianlin Feng, Yawen Long, Xiangliang Jin:
A Small Area 100KS/s 10-bit SAR ADC for X-ray Detector. ICCT 2020: 1035-1038 - [c10]Liang Xie, Shunle Guo, Zhaoxi Li, Xiangliang Jin:
A High Speed Rail-to-Rail Operational Amplifier with Constant-gm for LVDS Receiver. ICCT 2020: 1044-1048
2010 – 2019
- 2019
- [j4]Liqiang Ding, Yang Wang, Zhanying Bao, Hanzhang Liao, Xiangliang Jin:
A nano-ampere current reference circuit in a 0.5 μm CDMOS technology. Microelectron. J. 90: 336-341 (2019) - [c9]Xuefeng Ye, Duoduo Zeng, Xiangliang Jin, Yang Wang:
A Low-Temperature-Coefficient and High-PSRR Bandgap Reference for Readout Circuit of SPAD. ASICON 2019: 1-4 - [c8]Zijie Zhou, Xiangliang Jin, Yang Wang, Peng Dong:
Design and Analysis of high robustness dual- direction SCR with heavily doping in N-Type Well. ASICON 2019: 1-4 - [c7]Liang Xie, Zhibo Huang, Wei Gao, Xiangliang Jin:
A CMOS Temperature-to-Digital Sensor With ±0.5° Inaccuracy from -55° to 150°. ICCT 2019: 1481-1485 - [c6]Liang Xie, Haichao Zhang, Xuefeng Han, Xiangliang Jin:
Design and Implementation of a Pipelined ADC for Silicon Microstrip Detector Readout Circuit. ICCT 2019: 1491-1495 - 2018
- [c5]Xiangliang Jin, Yang Wang:
A Novel Dual Direction SCR With Dummy Gate Structure for High Voltage ESD Protection. APCCAS 2018: 443-446 - 2015
- [j3]Li Bin, Deng Zhun, Xie Liang, Xiangliang Jin:
99.4% Switching Energy Saving and 87.5% Area Reduction Switching Scheme for SAR ADC. IEICE Trans. Electron. 98-C(10): 984-986 (2015) - [j2]Yang Wang, Xiangliang Jin, Liu Yang, Qi Jiang, Huihui Yuan:
Robust dual-direction SCR with low trigger voltage, tunable holding voltage for high-voltage ESD protection. Microelectron. Reliab. 55(3-4): 520-526 (2015) - [j1]Qi Jiang, Huihui Yuan, Yang Wang, Xiangliang Jin:
Design and analyze of transient-induced latch-up in RS485 transceiver with on-chip TVS. Microelectron. Reliab. 55(3-4): 637-644 (2015) - [c4]Xiangliang Jin, Zhenyu Jiang, Manfang Tian:
TCAD simulations of novel Interrupted-P-Finger UV/Blue photodiode based on CMOS process. ASICON 2015: 1-4 - [c3]Xiangliang Jin, Manfang Tian, Zhenyu Jiang, Han Wang:
A physical model of novel UV and blue-extended photodetector based on CMOS process. ASICON 2015: 1-4 - [c2]Xiangliang Jin, Feng Zhang:
System-level modeling and analysis of third order MEMS accelerometer. ASICON 2015: 1-4 - [c1]Hongjiao Yang, Xiangliang Jin, Lizhen Tang, Weihui Liu, Jia Yang:
Simulation and analysis of P+/N SPAD for 3D imaging. ASICON 2015: 1-4
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