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2020 – today
- 2024
[c24]Umeshwarnath Surendranathan, Farzana Hoque, Aleksandar Milenkovic, Biswajit Ray:
Technology Scaling Effects on SRAM Data Remanence. DRC 2024: 1-2- [c23]Matchima Buddhanoy
, Kamil Khan, Aleksandar Milenkovic, Sudeep Pasricha, Biswajit Ray:
Improving Block Management in 3D NAND Flash SSDs with Sub-Block First Write Sequencing. ACM Great Lakes Symposium on VLSI 2024: 296-300 - [c22]Matchima Buddhanoy, Sudeep Pasricha, Biswajit Ray:
Life-after-Death: Exploring Thermal Annealing Conditions to Enhance 3D NAND SSD Endurance. HotStorage 2024 - [c21]Mondol Anik Kumar, Biswajit Ray:
Cross-Temperature Reliability of 3D NAND: Cell-to-Cell Variability Analysis and Countermeasure. IRPS 2024: 25 - 2023
- [c20]Sijay Huang, Biswajit Ray:
Overcoming the low cell current bottleneck of 3D NAND flash memory array with novel device design. DRC 2023: 1-2 - [c19]Umeshwarnath Surendranathan, Horace Wilson, Biswajit Ray:
Technology scaling effects on SRAM-PUF reliability under ionizing radiation. DRC 2023: 1-2 - [c18]Md Raquibuzzaman, Aleksandar Milenkovic, Biswajit Ray:
Hide-and-Seek: Hiding Secrets in Threshold Voltage Distributions of NAND Flash Memory Cells. HotStorage 2023: 80-86 - [c17]Biswajit Ray, Matchima Buddhanoy, Mondol Anik Kumar:
Towards Improving Ionizing Radiation Tolerance of 3-D NAND Flash Memory. IMW 2023: 1-4 - [c16]Matchima Buddhanoy, Biswajit Ray:
Electrostatic Shielding of NAND Flash Memory from Ionizing Radiation. IRPS 2023: 1-5 - 2022
- [c15]Md Raquibuzzaman, Md. Mehedi Hasan, Aleksandar Milenkovic, Biswajit Ray:
Layer-to-Layer Endurance Variation of 3D NAND Flash Memory. IRPS 2022: 1-5 - [c14]Md Raquibuzzaman, Matchima Buddhanoy, Aleksandar Milenkovic, Biswajit Ray:
Instant data sanitization on multi-level-cell NAND flash memory. SYSTOR 2022: 85-95 - 2021
- [j4]Prawar Poudel, Biswajit Ray, Aleksandar Milenkovic:
Microcontroller Fingerprinting Using Partially Erased NOR Flash Memory Cells. ACM Trans. Embed. Comput. Syst. 20(3): 26:1-26:23 (2021) - [c13]Matchima Buddhanoy, Sadman Sakib, Biswajit Ray:
Runtime Variability Monitor for Data Retention Characteristics of Commercial NAND Flash Memory. IRPS 2021: 1-5 - 2020
- [c12]Prawar Poudel, Biswajit Ray, Aleksandar Milenkovic:
Flashmark: Watermarking of NOR Flash Memories for Counterfeit Detection. DAC 2020: 1-6 - [c11]Bashir M. Sabquat Bahar Talukder, Vineetha Menon, Biswajit Ray, Tempestt J. Neal, Md. Tauhidur Rahman:
Towards the Avoidance of Counterfeit Memory: Identifying the DRAM Origin. HOST 2020: 111-121 - [c10]Md. Mehedi Hasan, Md Raquibuzzaman, Indranil Chatterjee, Biswajit Ray:
Radiation Tolerance of 3-D NAND Flash Based Neuromorphic Computing System. IRPS 2020: 1-4 - [c9]Md. Mehedi Hasan, Biswajit Ray:
Data Recovery from "Scrubbed" NAND Flash Storage: Need for Analog Sanitization. USENIX Security Symposium 2020: 1399-1408
2010 – 2019
- 2019
- [j3]Bashir M. Sabquat Bahar Talukder, Biswajit Ray, Domenic Forte, Md. Tauhidur Rahman:
PreLatPUF: Exploiting DRAM Latency Variations for Generating Robust Device Signatures. IEEE Access 7: 81106-81120 (2019) - [j2]Prawar Poudel, Biswajit Ray, Aleksandar Milenkovic:
Microcontroller TRNGs Using Perturbed States of NOR Flash Memory Cells. IEEE Trans. Computers 68(2): 307-313 (2019) - [c8]Saranyu Chattopadhyay, Preeti Kumari, Biswajit Ray, Rajat Subhra Chakraborty:
Machine Learning Assisted Accurate Estimation of Usage Duration and Manufacturer for Recycled and Counterfeit Flash Memory Detection. ATS 2019: 49-54 - [c7]Bashir M. Sabquat Bahar Talukder, Joseph Kerns, Biswajit Ray, Thomas H. Morris, Md. Tauhidur Rahman:
Exploiting DRAM Latency Variations for Generating True Random Numbers. ICCE 2019: 1-6 - [c6]Mehedi Hasan, Biswajit Ray:
Tolerance of Deep Neural Network Against the Bit Error Rate of NAND Flash Memory. IRPS 2019: 1-4 - [i3]Bashir M. Sabquat Bahar Talukder, Vineetha Menon, Biswajit Ray, Tempestt J. Neal, Md. Tauhidur Rahman:
Towards the Avoidance of Counterfeit Memory: Identifying the DRAM Origin. CoRR abs/1911.03395 (2019) - 2018
- [j1]Sadman Sakib, Preeti Kumari, Bashir M. Sabquat Bahar Talukder, Md. Tauhidur Rahman, Biswajit Ray:
Non-Invasive Detection Method for Recycled Flash Memory Using Timing Characteristics †. Cryptogr. 2(3): 17 (2018) - [c5]Preeti Kumari, Bashir M. Sabquat Bahar Talukder, Sadman Sakib, Biswajit Ray, Md. Tauhidur Rahman:
Independent detection of recycled flash memory: Challenges and solutions. HOST 2018: 89-95 - [c4]Stephen Ritter, Tyler Pigg, Connor Brown, Biswajit Ray:
True Random Number Generator using Solar Output Characteristics. WiSEE 2018: 224-226 - [c3]Preeti Kumari, Biswajit Ray:
Wireless Passive Radiation Dosimeter Using Flash Memory. WiSEE 2018: 239-245 - [i2]Bashir M. Sabquat Bahar Talukder, Joseph Kerns, Biswajit Ray, Thomas H. Morris, Md. Tauhidur Rahman:
Exploiting DRAM Latency Variations for Generating True Random Numbers. CoRR abs/1808.02068 (2018) - [i1]Bashir M. Sabquat Bahar Talukder, Biswajit Ray, Mark M. Tehranipoor, Domenic Forte, Md. Tauhidur Rahman:
LDPUF: Exploiting DRAM Latency Variations to Generate Robust Device Signatures. CoRR abs/1808.02584 (2018) - 2013
- [b1]Biswajit Ray:
Redefining the Operation and Design Considerations of Organic Solar Cells: Role of Morphology and Defect States. Purdue University, USA, 2013
2000 – 2009
- 2008
- [c2]Biswajit Ray, Santanu Mahapatra:
A New Threshold Voltage Model for Omega Gate Cylindrical Nanowire Transistor. VLSI Design 2008: 447-452
1990 – 1999
- 1993
- [c1]Biswajit Ray:
Bidirectional DC/DC power conversion using constant-frequency quasi-resonant topology. ISCAS 1993: 2347-2350
Coauthor Index
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