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Hyun-Cheol Bae

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2010 – 2019

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2017
[j1]
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  - journals/mr/YoonCBMEJ17
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  - https://dblp.org/rec/journals/mr/YoonCBMEJ17
Hyungseok Yoon, Kwang-Seong Choi, Hyun-Cheol Bae, Jong-Tae Moon, Yong-Sung Eom, Insu Jeon:
Evaluating the material properties of underfill for a reliable 3D TSV integration package using numerical analysis. Microelectron. Reliab. 71: 41-50 (2017)
2015
[c4]
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Daniel H. Jung, Heegon Kim, Jonghoon J. Kim, Sukjin Kim, Joungho Kim, Hyun-Cheol Bae, Kwang-Seong Choi:
Modeling and analysis of defects in through silicon via channel for non-invasive fault isolation. 3DIC 2015: TS8.29.1-TS8.29.4
2014
[c3]
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Daniel H. Jung, Heegon Kim, Jonghoon J. Kim, Sukjin Kim, Joungho Kim, Hyun-Cheol Bae, Kwang-Seong Choi:
Fault detection and isolation of multiple defects in through silicon via (TSV) channel. 3DIC 2014: 1-5
2013
[c2]
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Daniel H. Jung, Jonghyun Cho, Heegon Kim, Jonghoon J. Kim, Hongseok Kim, Joungho Kim, Hyun-Cheol Bae, Kwang-Seong Choi:
Fault isolation of short defect in through silicon via (TSV) based 3D-IC. 3DIC 2013: 1-4
[c1]
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  - conf/emccompo/JungKKKBC13
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Daniel H. Jung, Heegon Kim, Jonghoon J. Kim, Joungho Kim, Hyun-Cheol Bae, Kwang-Seong Choi:
Modeling and analysis of open defect in through silicon via (TSV) channel. EMC Compo 2013: 163-166

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