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2020 – today
- 2022
[j10]Antonio Calomarde
, Salvador Manich, Antonio Rubio, Francisco Gámiz:
Influence of Punch Trough Stop Layer and Well Depths on the Robustness of Bulk FinFETs to Heavy Ions Impact. IEEE Access 10: 47169-47178 (2022)- 2021
- [j9]Carlos Molero, Ángel Palomares-Caballero, Antonio Alex-Amor, Ignacio Parellada-Serrano, Francisco Gámiz, Pablo Padilla, Juan F. Valenzuela-Valdés:
Metamaterial-Based Reconfigurable Intelligent Surface: 3D Meta-Atoms Controlled by Graphene Structures. IEEE Commun. Mag. 59(6): 42-48 (2021) - 2020
- [j8]Carlos Navarro, Carlos Marquez, Santiago Navarro, Francisco Gámiz:
Dual PN Source/Drain Reconfigurable FET for Fast and Low-Voltage Reprogrammable Logic. IEEE Access 8: 132376-132381 (2020) - [j7]Antonio Calomarde, Antonio Rubio, Francesc Moll, Francisco Gámiz:
Active Radiation-Hardening Strategy in Bulk FinFETs. IEEE Access 8: 201441-201449 (2020)
2010 – 2019
- 2019
- [j6]Carlos Navarro, Carlos Marquez, Santiago Navarro, Carmen Lozano, Sehyun Kwon, Yong-Tae Kim, Francisco Gámiz:
Simulation Perspectives of Sub-1V Single-Supply Z2-FET 1T-DRAM Cells for Low-Power. IEEE Access 7: 40279-40284 (2019) - [j5]Carlos Marquez, Carlos Navarro, Santiago Navarro, José Luis Padilla, Luca Donetti, Carlos Sampedro, Philippe Galy, Yong-Tae Kim, Francisco Gámiz:
On the Low-Frequency Noise Characterization of Z2-FET Devices. IEEE Access 7: 42551-42556 (2019) - [c8]Carlos Marquez, Santiago Navarro, Carlos Navarro, Norberto Salazar, Philippe Galy, Sorin Cristoloveanu, Francisco Gámiz:
Temperature and Gate Leakage Influence on the Z2-FET Memory Operation. ESSDERC 2019: 238-241 - [c7]Cristina Medina-Bailon, Carlos Sampedro, José Luis Padilla, Luca Donetti, Vihar P. Georgiev, Francisco Gámiz, Asen Asenov:
Techniques for Statistical Enhancement in a 2D Multi-subband Ensemble Monte Carlo Nanodevice Simulator. LSSC 2019: 411-419 - [c6]Carlos Sampedro, Cristina Medina-Bailon, Luca Donetti, José Luis Padilla, Carlos Navarro, Carlos Marquez, Francisco Gámiz:
Multi-Subband Ensemble Monte Carlo Simulator for Nanodevices in the End of the Roadmap. LSSC 2019: 438-445 - 2018
- [c5]Cristina Medina-Bailon, Toufik Sadi, Carlos Sampedro, José Luis Padilla, Luca Donetti, Vihar P. Georgiev, Francisco Gámiz, Asen Asenov:
Impact of the Trap Attributes on the Gate Leakage Mechanisms in a 2D MS-EMC Nanodevice Simulator. NMA 2018: 273-280 - 2017
- [c4]Luca Donetti, Carlos Sampedro, Francisco Javier García Ruiz, Andres Godoy, Francisco Gámiz:
Three-dimensional multi-subband simulation of scaled FinFETs. ESSDERC 2017: 180-183 - 2015
- [c3]V. Velayudhan, Javier Martín-Martínez, Marc Porti, Carlos Couso, Rosana Rodríguez, Montserrat Nafría, Xavier Aymerich, Carlos Marquez, Francisco Gámiz:
Threshold voltage and on-current Variability related to interface traps spatial distribution. ESSDERC 2015: 230-233 - 2014
- [j4]Francesco Vecil, José Miguel Mantas, María J. Cáceres, Carlos Sampedro, Andres Godoy, Francisco Gámiz:
A parallel deterministic solver for the Schrödinger-Poisson-Boltzmann system in ultra-short DG-MOSFETs: Comparison with Monte-Carlo. Comput. Math. Appl. 67(9): 1703-1721 (2014) - [c2]Enrique G. Marin, Francisco Javier García Ruiz, Andres Godoy, Isabel M. Tienda-Luna, Francisco Gámiz:
Size-dependent electron mobility in InAs nanowires. ESSDERC 2014: 317-320 - 2013
- [j3]Raúl Valín Ferreiro, Carlos Sampedro, Natalia Seoane, Manuel Aldegunde, Antonio J. García-Loureiro, Andres Godoy, Francisco Gámiz:
Optimisation and parallelisation of a 2D MOSFET multi-subband ensemble Monte Carlo simulator. Int. J. High Perform. Comput. Appl. 27(4): 483-492 (2013) - [j2]V. Velayudhan, Francisco Gámiz, Javier Martín-Martínez, Rosana Rodríguez, Montserrat Nafría, Xavier Aymerich:
Influence of the interface trap location on the performance and variability of ultra-scaled MOSFETs. Microelectron. Reliab. 53(9-11): 1243-1246 (2013) - 2012
- [c1]Carlos Navarro, Noel Rodriguez, Luca Donetti, Akiko Oliata, Francisco Gámiz, François Andrieu, Olivier Faynot, Claire Fenouillet-Béranger, Sorin Cristoloveanu:
Multibranch mobility characterization: Evidence of carrier mobility enhancement by back-gate biasing in FD-SOI MOSFET. ESSDERC 2012: 209-212
2000 – 2009
- 2004
- [j1]Juan Garcia Ortega, Francisco R. Palomo, Antonio Luque, Carmen Aracil, José M. Quero, Daniel Carrión, Francisco Gámiz, Plácido Revilla, Juan Pérez-Tinao, Manuel Moreno, Pedro Robles, Leopoldo García Franquelo:
Reconfigurable distributed network control system for industrial plant automation. IEEE Trans. Ind. Electron. 51(6): 1168-1180 (2004)
Coauthor Index
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