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ORCIDYong-Hun Kim
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2020 – today
- 2024
[j14]Hyun-A. Ahn
, Yoo-Chang Sung, Yong-Hun Kim, Janghoo Kim, Kihan Kim, Dong-Hun Lee, Young-Gil Go, Jae-Woo Lee, Jae-Woo Jung, Yong-Hyun Kim, Garam Choi, Jun-Seo Park, Bo-Hyeon Lee, Jin-Hyeok Baek, Daesik Moon, Joo-Youn Lim, Daihyun Lim, Seung-Jun Bae, Tae-Young Oh:
A 1.01-V 8.5-Gb/s/pin 16-Gb LPDDR5x SDRAM With Advanced I/O Circuitry for High-Speed and Low-Power Applications. IEEE J. Solid State Circuits 59(10): 3479-3487 (2024)- 2023
- [j13]Daewoong Lee, Jaehyeok Baek, Hye-Jung Kwon, Daehyun Kwon, Chulhee Cho, Sang-Hoon Kim, Donggun An, Chulsoon Chang, Unhak Lim, Jiyeon Im, Wonju Sung, Hye-Ran Kim, Sun-Young Park, Hyoung-Joo Kim, Ho-Seok Seol, Juhwan Kim, Jung-Bum Shin, Gil-Young Kang, Yong-Hun Kim, Sooyoung Kim, Wansoo Park, Seok-Jung Kim, ChanYong Lee, Seungseob Lee, TaeHoon Park, Chi-Sung Oh, Hyodong Ban, Hyungjong Ko, Hoyoung Song, Tae-Young Oh, SangJoon Hwang, Kyung Suk Oh, Jung-Hwan Choi, Jooyoung Lee:
A 16-Gb T-Coil-Based GDDR6 DRAM With Merged-MUX TX, Optimized WCK Operation, and Alternative-Data-Bus Achieving 27-Gb/s/Pin in NRZ. IEEE J. Solid State Circuits 58(1): 279-290 (2023) - [c9]Hyun-A. Ahn, Yoo-Chang Sung, Yong-Hun Kim, Janghoo Kim, Kihan Kim, Donghun Lee, Young-Gil Go, Jae-Woo Lee, Jae-Woo Jung, Yong-Hyun Kim, Garam Choi, Jun-Seo Park, Bo-Hyeon Lee, Jin-Hyeok Baek, Daesik Moon, Daihyun Lim, Seung-Jun Bae, Young-Soo Sohn, Changsik Yoo, Tae-Young Oh:
A 1.01V 8.5Gb/s/pin 16Gb LPDDR5x SDRAM with Self-Pre-Emphasized Stacked-Tx, Supply Voltage Insensitive Rx, and Optimized Clock Using 4th-Generation 10nm DRAM Process for High-Speed and Low-Power Applications. A-SSCC 2023: 1-4 - 2022
- [c8]Daewoong Lee, Hye-Jung Kwon, Daehyun Kwon, Jaehyeok Baek, Chulhee Cho, Sanghoon Kim, Donggun An, Chulsoon Chang, Unhak Lim, Jiyeon Im, Wonju Sung, Hye-Ran Kim, Sun-Young Park, Hyoungjoo Kim, Ho-Seok Seol, Juhwan Kim, Junabum Shin, Kil-Youna Kang, Yong-Hun Kim, Sooyoung Kim, Wansoo Park, Seok-Jung Kim, ChanYong Lee, Seungseob Lee, TaeHoon Park, Chi Sung Oh, Hyodong Ban, Hyungjong Ko, Hoyoung Song, Tae-Young Oh, SangJoon Hwang, Kyung Suk Oh, Jung-Hwan Choi, Jooyoung Lee:
A 16Gb 27Gb/s/pin T-coil based GDDR6 DRAM with Merged-MUX TX, Optimized WCK Operation, and Alternative-Data-Bus. ISSCC 2022: 446-448 - [c7]Dae-Hyun Kim, Byungkyu Song, Hyun-A. Ahn, Woongjoon Ko, Sung-Geun Do, Seokjin Cho, Kihan Kim, Seung-Hoon Oh, Hye-Yoon Joo, Geuntae Park, Jin-Hun Jang, Yong-Hun Kim, Donghun Lee, Jaehoon Jung, Yongmin Kwon, Youngjae Kim, Jaewoo Jung, Seongil O, Seoulmin Lee, Jaeseong Lim, Junho Son, Jisu Min, Haebin Do, Jaejun Yoon, Isak Hwang, Jinsol Park, Hong Shim, Seryeong Yoon, Dongyeong Choi, Jihoon Lee, Soohan Woo, Eunki Hong, Junha Choi, Jae-Sung Kim, Sangkeun Han, Jong-Min Bang, Bokgue Park, Jang-Hoo Kim, Seouk-Kyu Choi, Gong-Heum Han, Yoo-Chang Sung, Wonil Bae, Jeong-Don Lim, Seungjae Lee, Changsik Yoo, Sang Joon Hwang, Jooyoung Lee:
A 16Gb 9.5Gb/S/pin LPDDR5X SDRAM With Low-Power Schemes Exploiting Dynamic Voltage-Frequency Scaling and Offset-Calibrated Readout Sense Amplifiers in a Fourth Generation 10nm DRAM Process. ISSCC 2022: 448-450 - 2021
- [c6]Yong-Hun Kim, Hyung-Jin Kim, Jaemin Choi, Min-Su Ahn, Dongkeon Lee, Seung-Hyun Cho, Dong-Yeon Park, Young-Jae Park, Min-Soo Jang, Yong-Jun Kim, Jinyong Choi, Sung-Woo Yoon, Jae-Woo Jung, Jae-Koo Park, Jae-Woo Lee, Dae-Hyun Kwon, Hyung-Seok Cha, Si-Hyeong Cho, Seong-Hoon Kim, Jihwa You, Kyoung-Ho Kim, Dae-Hyun Kim, Byung-Cheol Kim, Young-Kwan Kim, Jun-Ho Kim, Seouk-Kyu Choi, Chanyoung Kim, Byongwook Na, Hye-In Choi, Reum Oh, Jeong-Don Ihm, Seung-Jun Bae, Nam Sung Kim, Jung-Bae Lee:
25.2 A 16Gb Sub-1V 7.14Gb/s/pin LPDDR5 SDRAM Applying a Mosaic Architecture with a Short-Feedback 1-Tap DFE, an FSS Bus with Low-Level Swing and an Adaptively Controlled Body Biasing in a 3rd-Generation 10nm DRAM. ISSCC 2021: 346-348 - 2020
- [j12]Daewoong Lee, Dongil Lee, Yong-Hun Kim, Hyun-Kyu Jeon, Byung-Guk Kim, Lee-Sup Kim:
A 10.8 Gb/s Quarter-Rate 1 FIR 1 IIR Direct DFE With Non-Time-Overlapping Data Generation for 4: 1 CMOS Clockless Multiplexer. IEEE Trans. Circuits Syst. II Express Briefs 67-II(1): 67-71 (2020)
2010 – 2019
- 2019
- [j11]Young-Ju Kim, Hye-Jung Kwon, Su-Yeon Doo, Min-Su Ahn, Yong-Hun Kim, Yong Jae Lee, Dong-Seok Kang, Sung-Geun Do, Chang-Yong Lee, Gun-hee Cho, Jae-Koo Park, Jae-Sung Kim, Kyung-Bae Park, Seung-Hoon Oh, Sang-Yong Lee, Ji-Hak Yu, Ki-Hun Yu, Chul-Hee Jeon, Sang-Sun Kim, Hyun-Soo Park, Jeong-Woo Lee, Seung-Hyun Cho, Keon-Woo Park, Yong-Jun Kim, Young-Hun Seo, Chang-Ho Shin, ChanYong Lee, Sam-Young Bang, Youn-Sik Park, Seouk-Kyu Choi, Byung-Cheol Kim, Gong-Heum Han, Seung-Jun Bae, Hyuk-Jun Kwon, Jung-Hwan Choi, Young-Soo Sohn, Kwang-Il Park, Seong-Jin Jang, Gyo-Young Jin:
A 16-Gb, 18-Gb/s/pin GDDR6 DRAM With Per-Bit Trainable Single-Ended DFE and PLL-Less Clocking. IEEE J. Solid State Circuits 54(1): 197-209 (2019) - [j10]Chongsoo Jung, Dongil Lee, Yong-Hun Kim, Daewoong Lee, Lee-Sup Kim:
A 12 Gb/s 1.59 mW/Gb/s Input-Data-Jitter-Tolerant Injection-Type CDR With Super-Harmonic Injection-Locking in 65-nm CMOS. IEEE Trans. Circuits Syst. II Express Briefs 66-II(12): 1972-1976 (2019) - [j9]Daewoong Lee, Dongil Lee, Yong-Hun Kim, Lee-Sup Kim:
A 0.9-V 12-Gb/s Two-FIR Tap Direct DFE With Feedback-Signal Common-Mode Control. IEEE Trans. Very Large Scale Integr. Syst. 27(3): 724-728 (2019) - [c5]Daewoong Lee, Dongil Lee, Yong-Hun Kim, Lee-Sup Kim:
A 0.87 V 12.5 Gb/s Clock-Path Feedback Equalization Receiver with Unfixed Tap Weighting Property in 65 nm CMOS. VLSI Circuits 2019: 196- - 2018
- [j8]Yong-Hun Kim, Dongil Lee, Daewoong Lee, Lee-Sup Kim:
A 10-Gb/s Reference-Less Baud-Rate CDR for Low Power Consumption With the Direct Feedback Method. IEEE Trans. Circuits Syst. II Express Briefs 65-II(11): 1539-1543 (2018) - [j7]Dongil Lee, Yong-Hun Kim, Daewoong Lee, Lee-Sup Kim:
A 0.65-V, 11.2-Gb/s Power Noise Tolerant Source-Synchronous Injection-Locked Receiver With Direct DTLB DFE. IEEE Trans. Circuits Syst. II Express Briefs 65-II(11): 1564-1568 (2018) - [c4]Young-Ju Kim, Hye-Jung Kwon, Su-Yeon Doo, Yoon-Joo Eom, Young-Sik Kim, Min-Su Ahn, Yong-Hun Kim, Sang-Hoon Jung, Sung-Geun Do, Chang-Yong Lee, Jae-Sung Kim, Dong-Seok Kang, Kyung-Bae Park, Jung-Bum Shin, Jong-Ho Lee, Seung-Hoon Oh, Sang-Yong Lee, Ji-Hak Yu, Ji-Suk Kwon, Ki-Hun Yu, Chul-Hee Jeon, Sang-Sun Kim, Min-Woo Won, Gun-hee Cho, Hyun-Soo Park, Hyung-Kyu Kim, Jeong-Woo Lee, Seung-Hyun Cho, Keon-Woo Park, Jae-Koo Park, Yong Jae Lee, Yong-Jun Kim, Young-Hun Seo, Beob-Rae Cho, Chang-Ho Shin, ChanYong Lee, YoungSeok Lee, Yoon-Gue Song, Sam-Young Bang, Youn-Sik Park, Seouk-Kyu Choi, Byeong-Cheol Kim, Gong-Heum Han, Seung-Jun Bae, Hyuk-Jun Kwon, Jung-Hwan Choi, Young-Soo Sohn, Kwang-Il Park, Seong-Jin Jang:
A 16Gb 18Gb/S/pin GDDR6 DRAM with per-bit trainable single-ended DFE and PLL-less clocking. ISSCC 2018: 204-206 - 2017
- [j6]Yong-Hun Kim, Taeho Lee, Hyun-Kyu Jeon, Dongil Lee, Lee-Sup Kim:
An Input Data and Power Noise Inducing Clock Jitter Tolerant Reference-Less Digital CDR for LCD Intra-Panel Interface. IEEE Trans. Circuits Syst. I Regul. Pap. 64-I(4): 823-835 (2017) - [j5]Taeho Lee, Yong-Hun Kim, Lee-Sup Kim:
A 5-Gb/s Digital Clock and Data Recovery Circuit With Reduced DCO Supply Noise Sensitivity Utilizing Coupling Network. IEEE Trans. Very Large Scale Integr. Syst. 25(1): 380-384 (2017) - 2016
- [j4]Sang-Hye Chung, Young-Ju Kim, Yong-Hun Kim, Lee-Sup Kim:
A 10-Gb/s 0.71-pJ/bit Forwarded-Clock Receiver Tolerant to High-Frequency Jitter in 65-nm CMOS. IEEE Trans. Circuits Syst. II Express Briefs 63-II(3): 264-268 (2016) - [j3]Yong-Hun Kim, Young-Ju Kim, Taeho Lee, Lee-Sup Kim:
A 21-Gbit/s 1.63-pJ/bit Adaptive CTLE and One-Tap DFE With Single Loop Spectrum Balancing Method. IEEE Trans. Very Large Scale Integr. Syst. 24(2): 789-793 (2016) - [j2]Taeho Lee, Yong-Hun Kim, Jaehyeong Sim, Jun-Seok Park, Lee-Sup Kim:
A 5-Gb/s 2.67-mW/Gb/s Digital Clock and Data Recovery With Hybrid Dithering Using a Time-Dithered Delta-Sigma Modulator. IEEE Trans. Very Large Scale Integr. Syst. 24(4): 1450-1459 (2016) - 2015
- [j1]Yong-Hun Kim, Young-Ju Kim, Tae-Ho Lee, Lee-Sup Kim:
An 11.5 Gb/s 1/4th Baud-Rate CTLE and Two-Tap DFE With Boosted High Frequency Gain in 110-nm CMOS. IEEE Trans. Very Large Scale Integr. Syst. 23(3): 588-592 (2015) - [c3]Dongil Lee, Taeho Lee, Yong-Hun Kim, Young-Ju Kim, Lee-Sup Kim:
An injection locked PLL for power supply variation robustness using negative phase shift phenomenon of injection locked frequency divider. CICC 2015: 1-4 - [c2]Daewoong Lee, Dongil Lee, Taeho Lee, Yong-Hun Kim, Lee-Sup Kim:
An integrated time register and arithmetic circuit with combined operation for time-domain signal processing. ISCAS 2015: 1830-1833 - 2012
- [c1]Yong-Hun Kim, Lee-Sup Kim:
A 20 Gbps 1-tap decision feedback equalizer with unfixed tap coefficient. ISCAS 2012: 321-324
Coauthor Index
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