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ORCIDSourabh Khandelwal
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2020 – today
- 2024
[c18]Gergana Drandova, Jose Jimenez, Jesse Wisch, Sourabh Khandelwal
, Kirk Ashby:
Fast, Scalable, and Highly Accurate Thermal Modeling for Use in GaN/GaAs RF Circuit Modeling Platforms. IRPS 2024: 1-4- 2022
- [c17]Sourabh Khandelwal, D. Bavi:
ASM-ESD - A comprehensive physics-based compact model for ESD Diodes. IRPS 2022: 5 - [c16]Hossein Eslahi, Tara J. Hamilton, Sourabh Khandelwal:
Ultra Compact and Linear 4-bit Digital-to-Analog Converter in 22nm FDSOI Technology. ISCAS 2022: 2778-2781 - 2021
- [i1]Cristino Salcines, Sourabh Khandelwal, Ingmar Kallfass:
A Compact Model for SiC Power MOSFETs for Large Current and High Voltage Operation. CoRR abs/2104.14733 (2021) - 2020
- [j4]Hossein Eslahi, Sayed Ali Albahrani, Dhawal Mahajan, Sourabh Khandelwal:
An Analytical Model for Hot Carrier Induced Long-Term Degradation in Power Amplifiers. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 39(10): 2000-2005 (2020) - [c15]Sourabh Khandelwal, Petra Hammes, Marek Schmidt-Szalowski, Amit Dikshit, Menno Clerk:
Dependence of AM/PM non-linearity on source field-plate in GaN HEMTs. BCICTS 2020: 1-4 - [c14]Sourabh Khandelwal, Brian Novak, Jordan Merkel, Ken A. Nagamatsu, Justin Parke, Mark Yu, Patrick Shea, Robert S. Howell:
SLC-ASM-HEMT: An Accurate compact model for SLCFET RF switch. BCICTS 2020: 1-4 - [c13]Hossein Eslahi, Tara J. Hamilton, Sourabh Khandelwal:
Frequency Behaviour of FeFET-Based Ultra-Low-Power Coupled Oscillator Neurons. ISCAS 2020: 1-4
2010 – 2019
- 2019
- [j3]Hossein Eslahi, Dhawal Mahajan, Sayed Ali Albahrani, Sourabh Khandelwal:
Design methodology considering evolution of statistical corners under long term degradation. Microelectron. J. 91: 36-41 (2019) - [c12]Jason Hodges, Sayed Ali Albahrani, Sourabh Khandelwal:
A Computationally Efficient Modelling Methodology for Field-Plates in GaN HEMTs. BCICTS 2019: 1-4 - [c11]Sourabh Khandelwal, Kevin Kellogg, Cole Hill, Hugo Morales, Larry Dunleavy, Gergana Drandova, Anita Pacheco, Jose Jimenez:
Quiescent Drain Voltage Dependence of Pulsed I-V Characteristics of GaN HEMTs: Analysis and Modeling. BCICTS 2019: 1-4 - [c10]Ankit Tripathi, Mehdi Arabizadeh, Sourabh Khandelwal, Chetan Singh Thakur:
Analog Neuromorphic System Based on Multi Input Floating Gate MOS Neuron Model. ISCAS 2019: 1-5 - 2018
- [c9]Sourabh Khandelwal, Yogesh Singh Chauhan, Jason Hodges, Sayed Ali Albahrani:
Non-Linear RF Modeling of GaN HEMTs with Industry Standard ASM GaN Model (Invited). BCICTS 2018: 93-97 - [c8]Kevin Kellogg, Sourabh Khandelwal, Neil Craig, Larry Dunleavy:
Improved Charge Modeling of Field-Plate Enhanced AlGaN/GaN HEMT Devices Using a Physics Based Compact Model. BCICTS 2018: 102-105 - 2017
- [c7]Sandeep Kumar Samal, Sourabh Khandelwal, Asif Islam Khan, Sayeef S. Salahuddin, Chenming Hu, Sung Kyu Lim:
Full chip power benefits with negative capacitance FETs. ISLPED 2017: 1-6 - 2016
- [j2]Pragya Kushwaha, K. Bala Krishna, Harshit Agarwal, Sourabh Khandelwal, Juan Pablo Duarte, Chenming Hu, Yogesh Singh Chauhan:
Thermal resistance modeling in FDSOI transistors with industry standard model BSIM-IMG. Microelectron. J. 56: 171-176 (2016) - [c6]Karthika Haridas, Sourabh Khandelwal, Anandarup Das:
AC to variable DC(buck and boost) modular multilevel converter using half bridge and full bridge cells. ICIT 2016: 257-262 - 2015
- [j1]Sourabh Khandelwal, Harshit Agarwal, Juan Pablo Duarte, Kaiman Chan, Sagnik Dey, Yogesh Singh Chauhan, Chenming Hu:
Modeling STI Edge Parasitic Current for Accurate Circuit Simulations. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 34(8): 1291-1294 (2015) - [c5]Juan Pablo Duarte, Sourabh Khandelwal, Aditya Sankar Medury, Chenming Hu, Pragya Kushwaha, Harshit Agarwal, Avirup Dasgupta, Yogesh Singh Chauhan:
BSIM-CMG: Standard FinFET compact model for advanced circuit design. ESSCIRC 2015: 196-201 - 2013
- [c4]F. M. Yigletu, Benjamín Iñíguez, Sourabh Khandelwal, Tor A. Fjeldly:
A compact charge-based physical model for AlGaN/GaN HEMTs. RWS 2013: 274-276 - [c3]F. M. Yigletu, Benjamín Iñíguez, Sourabh Khandelwal, Tor A. Fjeldly:
A compact charge-based physical model for AlGaN/GaN HEMTs. WiSNet 2013: 70-72 - 2012
- [c2]Yogesh Singh Chauhan, Sriramkumar Venugopalan, Mohammed A. Karim, Sourabh Khandelwal, Navid Paydavosi, Pankaj Thakur, Ali M. Niknejad, Chenming Hu:
BSIM - Industry standard compact MOSFET models. ESSCIRC 2012: 30-33 - 2010
- [c1]Muthubalan Varadharajaperumal, Saurabh Sirohi, Sourabh Khandelwal, Ethirajan Tamilmani, Vaidyananthan Subramanian:
Modeling of High Frequency Noise in SOI MOSFETs. VLSI Design 2010: 212-217
Coauthor Index
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