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"High-Field Hole Transport in Strained Si and SiGe by Monte Carlo ..."

Fabian M. Bufler, P. Graf, Bernd Meinerzhagen (1998)

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DOI: 10.1155/1998/65181

access: open

type: Journal Article

metadata version: 2023-10-16

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  - https://dblp.org/rec/journals/vlsi/BuflerGM98
Fabian M. Bufler, P. Graf, Bernd Meinerzhagen:
High-Field Hole Transport in Strained Si and SiGe by Monte Carlo Simulation: Full Band Versus Analytic Band Models. VLSI Design 8(1-4): 41-45 (1998)

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