"A 4-Transistor nMOS-Only Logic-Compatible Gain-Cell Embedded DRAM With ..."

Robert Giterman et al. (2018)

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DOI: 10.1109/TCSI.2017.2747087

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type: Journal Article

metadata version: 2022-10-02

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Robert Giterman, Alexander Fish, Andreas Burg, Adam Teman:
A 4-Transistor nMOS-Only Logic-Compatible Gain-Cell Embedded DRAM With Over 1.6-ms Retention Time at 700 mV in 28-nm FD-SOI. IEEE Trans. Circuits Syst. I Regul. Pap. 65-I(4): 1245-1256 (2018)

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