"A quantitative study of Phosphorous implantation damage on the thick gate ..."

Xinggong Wan et al. (2014)

> Home

Details and statistics

DOI: 10.1016/J.MICROREL.2014.07.074

access: closed

type: Journal Article

metadata version: 2020-02-22

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - journals/mr/WanCBTBSA14
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/mr/WanCBTBSA14
Xinggong Wan, Sandhya Chandrashekhar, Boris Bayha, Martin Trentzsch, Torben Balzer, Mahesh Siddabathula, Oliver Aubel:
A quantitative study of Phosphorous implantation damage on the thick gate oxide of the 28 nm node. Microelectron. Reliab. 54(9-10): 2306-2309 (2014)

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.