"Degradation of vertical GaN-on-GaN fin transistors: Step-stress and ..."

Maria Ruzzarin et al. (2018)

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DOI: 10.1016/J.MICROREL.2018.06.044

access: open

type: Journal Article

metadata version: 2024-05-07

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Maria Ruzzarin, Matteo Meneghini, Carlo De Santi, Min Sun, Tomás Palacios, Gaudenzio Meneghesso, Enrico Zanoni:
Degradation of vertical GaN-on-GaN fin transistors: Step-stress and constant voltage experiments. Microelectron. Reliab. 88-90: 620-626 (2018)

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