"Physical degradation of GaN HEMT devices under high drain bias reliability ..."

S. Y. Park et al. (2009)

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DOI: 10.1016/J.MICROREL.2009.02.015

access: closed

type: Journal Article

metadata version: 2020-02-22

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S. Y. Park, Carlo Floresca, Uttiya Chowdhury, Jose L. Jimenez, Cathy Lee, Edward Beam, Paul Saunier, Tony Balistreri, Moon J. Kim:
Physical degradation of GaN HEMT devices under high drain bias reliability testing. Microelectron. Reliab. 49(5): 478-483 (2009)

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