"Reliability aspects of gate oxide under ESD pulse stress."

Adrien Ille et al. (2009)

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DOI: 10.1016/J.MICROREL.2009.06.054

access: closed

type: Journal Article

metadata version: 2023-09-30

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Adrien Ille, Wolfgang Stadler, Thomas Pompl, Harald Gossner, Tilo Brodbeck, Kai Esmark, Philipp Riess, David Alvarez, Kiran V. Chatty, Robert Gauthier, Alain Bravaix:
Reliability aspects of gate oxide under ESD pulse stress. Microelectron. Reliab. 49(12): 1407-1416 (2009)

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