"Application of forward gated-diode R-G current method in extracting F-N ..."

Jin He et al. (2002)

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DOI: 10.1016/S0026-2714(01)00122-6

access: closed

type: Journal Article

metadata version: 2024-06-04

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Jin He, Xing Zhang, Ru Huang, Yangyuan Wang:
Application of forward gated-diode R-G current method in extracting F-N stress-induced interface traps in SOI NMOSFETs. Microelectron. Reliab. 42(1): 145-148 (2002)

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