"Investigation of smart power DMOS devices under repetitive stress ..."

Sergey Bychikhin et al. (2010)

> Home

Details and statistics

DOI: 10.1016/J.MICROREL.2010.07.138

access: closed

type: Journal Article

metadata version: 2020-11-05

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - journals/mr/BychikhinHRVGP10
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/mr/BychikhinHRVGP10
Sergey Bychikhin, Georg Haberfehlner, J. Rhayem, Daniel Vanderstraeten, Renaud Gillon, Dionyz Pogany:
Investigation of smart power DMOS devices under repetitive stress conditions using transient thermal mapping and numerical simulation. Microelectron. Reliab. 50(9-11): 1427-1430 (2010)

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.