"Two-dimensional Dopant Profiling and Imaging of 4H Silicon Carbide Devices ..."

Marco Buzzo et al. (2005)

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DOI: 10.1016/J.MICROREL.2005.07.069

access: closed

type: Journal Article

metadata version: 2020-02-22

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Marco Buzzo, Mauro Ciappa, Maria Stangoni, Wolfgang Fichtner:
Two-dimensional Dopant Profiling and Imaging of 4H Silicon Carbide Devices by Secondary Electron Potential Contrast. Microelectron. Reliab. 45(9-11): 1499-1504 (2005)

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