"Non-quasi-static approach with surface-potential-based MOSFET model HiSIM ..."

Tatsuya Ezaki et al. (2008)

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DOI: 10.1016/J.MATCOM.2007.10.008

access: closed

type: Journal Article

metadata version: 2020-03-04

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Tatsuya Ezaki, Dondee Navarro, Youichi Takeda, Norio Sadachika, Gaku Suzuki, Mitiko Miura-Mattausch, Hans Jürgen Mattausch, Tatsuya Ohguro, Takahiro Iizuka, Masahiko Taguchi, Shigetaka Kumashiro, Shunsuke Miyamoto:
Non-quasi-static approach with surface-potential-based MOSFET model HiSIM for RF circuit simulations. Math. Comput. Simul. 79(4): 1096-1106 (2008)

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