"InP HBT integrated circuit technology with selectively implanted ..."

Marko Sokolich et al. (2004)

> Home

Details and statistics

DOI: 10.1109/JSSC.2004.833560

access: closed

type: Journal Article

metadata version: 2022-04-26

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - journals/jssc/SokolichCRCRTTF04
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/jssc/SokolichCRCRTTF04
Marko Sokolich, Mary Y. Chen, Rajesh D. Rajavel, David H. Chow, Yakov Royter, Stephen Thomas III, Charles H. Fields, Binqiang Shi, Steven S. Bui, James Chingwei Li, Donald A. Hitko, Kenneth R. Elliott:
InP HBT integrated circuit technology with selectively implanted subcollector and regrown device layers. IEEE J. Solid State Circuits 39(10): 1615-1621 (2004)

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.