"A 1.6 V 1.4 Gbp/s/pin Consumer DRAM With Self-Dynamic Voltage Scaling ..."

Hyun-Woo Lee et al. (2012)

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DOI: 10.1109/JSSC.2011.2164710

access: closed

type: Journal Article

metadata version: 2020-08-30

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Hyun-Woo Lee, Ki-Han Kim, Young-Kyoung Choi, Ju-Hwan Sohn, Nak-Kyu Park, Kwan-Weon Kim, Chulwoo Kim, Young-Jung Choi, Byong-Tae Chung:
A 1.6 V 1.4 Gbp/s/pin Consumer DRAM With Self-Dynamic Voltage Scaling Technique in 44 nm CMOS Technology. IEEE J. Solid State Circuits 47(1): 131-140 (2012)

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