"A 14-ns 14-Mb CMOS DRAM with 300-mW active power."

Toshiaki Kirihata et al. (1992)

> Home

Details and statistics

DOI: 10.1109/4.149425

access: closed

type: Journal Article

metadata version: 2025-02-03

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - journals/jssc/KirihataDKSKSSSTHSYHK92
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/jssc/KirihataDKSKSSSTHSYHK92
Toshiaki Kirihata, Sang H. Dhong, Koji Kitamura, Toshio Sunaga, Yasunao Katayama, Roy E. Scheuerlein, Akashi Satoh, Yoshinori Sakaue, Kentaroh Tobimatsu, Koji Hosokawa, Takaki Saitoh, Takefumi Yoshikawa, Hideki Hashimoto, Michiya Kazusawa:
A 14-ns 14-Mb CMOS DRAM with 300-mW active power. IEEE J. Solid State Circuits 27(9): 1222-1228 (1992)

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.