"A 16-GB 640-GB/s HBM2E DRAM With a Data-Bus Window Extension Technique and ..."

Ki Chul Chun et al. (2021)

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DOI: 10.1109/JSSC.2020.3027360

access: closed

type: Journal Article

metadata version: 2021-01-11

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Ki Chul Chun, Yong-Ki Kim, Yesin Ryu, Jaewon Park, Chi Sung Oh, Young-Yong Byun, So-Young Kim, Dong-Hak Shin, Jun Gyu Lee, Byung-Kyu Ho, Min-Sang Park, Seong-Jin Cho, Seunghan Woo, Byoung-Mo Moon, Beomyong Kil, Sungoh Ahn, Jae Hoon Lee, Sooyoung Kim, Seouk-Kyu Choi, Jae-Seung Jeong, Sung-Gi Ahn, Jihye Kim, Jun Jin Kong, Kyomin Sohn, Nam Sung Kim, Jung-Bae Lee:
A 16-GB 640-GB/s HBM2E DRAM With a Data-Bus Window Extension Technique and a Synergetic On-Die ECC Scheme. IEEE J. Solid State Circuits 56(1): 199-211 (2021)

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