"Design Choice in 45-nm Dual-Port SRAM - 8T, 10T Single End, and 10T ..."

Hiroki Noguchi et al. (2011)

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DOI: 10.2197/IPSJTSLDM.4.80

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type: Journal Article

metadata version: 2024-03-11

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Hiroki Noguchi, Yusuke Iguchi, Hidehiro Fujiwara, Shunsuke Okumura, Koji Nii, Hiroshi Kawaguchi, Masahiko Yoshimoto:
Design Choice in 45-nm Dual-Port SRAM - 8T, 10T Single End, and 10T Differential. IPSJ Trans. Syst. LSI Des. Methodol. 4: 80-90 (2011)

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