"FinFET-Based Flex-Vth SRAM Design for Drastic Standby-Leakage-Current ..."

Shin-ichi O'Uchi et al. (2008)

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DOI: 10.1093/IETELE/E91-C.4.534

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type: Journal Article

metadata version: 2023-06-26

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Shin-ichi O'Uchi, Meishoku Masahara, Kazuhiko Endo, Yongxun Liu, Takashi Matsukawa, Kunihiro Sakamoto, Toshihiro Sekigawa, Hanpei Koike, Eiichi Suzuki:
FinFET-Based Flex-Vth SRAM Design for Drastic Standby-Leakage-Current Reduction. IEICE Trans. Electron. 91-C(4): 534-542 (2008)

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