"GeC film with high substitutional carbon concentration formed by ion ..."

Bingxin Zhang et al. (2018)

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DOI: 10.1007/S11432-017-9264-0

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type: Journal Article

metadata version: 2024-06-03

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Bingxin Zhang, Xia An, Xiangyang Hu, Ming Li, Xing Zhang, Ru Huang:
GeC film with high substitutional carbon concentration formed by ion implantation and solid phase epitaxy for strained Ge n-MOSFETs. Sci. China Inf. Sci. 61(6): 069405:1-069405:3 (2018)

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