"Layout dependence of total-ionizing-dose response in 65-nm bulk Si pMOSFET."

Zhexuan Ren et al. (2021)

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DOI: 10.1007/S11432-019-2795-7

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type: Journal Article

metadata version: 2024-06-04

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Zhexuan Ren, Xia An, Gensong Li, Xing Zhang, Ru Huang:
Layout dependence of total-ionizing-dose response in 65-nm bulk Si pMOSFET. Sci. China Inf. Sci. 64(2) (2021)

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