"Quasi-two-dimensional subthreshold current model of deep submicrometer SOI ..."

Ru Huang et al. (2001)

> Home

Details and statistics

DOI: 10.1007/BF02713940

access: closed

type: Journal Article

metadata version: 2024-06-04

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - journals/chinaf/HuangBZW01
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/chinaf/HuangBZW01
Ru Huang, Weihai Bu, Xing Zhang, Yangyuan Wang:
Quasi-two-dimensional subthreshold current model of deep submicrometer SOI drive-in gate controlled hybrid transistors with lateral non-uniform doping profile. Sci. China Ser. F Inf. Sci. 44(1): 60-67 (2001)

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.