"Ge-doped In2O3: First Demonstration of Utlizing Ge as Oxygen Vacancy ..."

Jiayi Wang et al. (2024)

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DOI: 10.1109/VLSITECHNOLOGYANDCIR46783.2024.10631346

access: closed

type: Conference or Workshop Paper

metadata version: 2024-10-17

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Jiayi Wang, Ziheng Bai, Kuo Zhang, Zhicheng Wu, Di Geng, Yang Xu, Nannan You, Yuxuan Li, Guanhua Yang, Ling Li, Shengkai Wang, Ming Liu:
Ge-doped In2O3: First Demonstration of Utlizing Ge as Oxygen Vacancy Consumer to Break the Mobility/Reliability Tradeoff for High Performance Oxide TFTs. VLSI Technology and Circuits 2024: 1-2

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