"A Novel Ambipolar Ferroelectric Tunnel FinFET based Content Addressable ..."

Jin Luo et al. (2022)

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DOI: 10.1109/VLSITECHNOLOGYANDCIR46769.2022.9830413

access: closed

type: Conference or Workshop Paper

metadata version: 2024-06-03

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Jin Luo, Weikai Xu, Boyi Fu, Zheru Yu, Mengxuan Yang, Yiqing Li, Qianqian Huang, Ru Huang:
A Novel Ambipolar Ferroelectric Tunnel FinFET based Content Addressable Memory with Ultra-low Hardware Cost and High Energy Efficiency for Machine Learning. VLSI Technology and Circuits 2022: 226-227

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