"A Low Power TSV I/O with Data Rate up to 10 Gb/s for Next Generation HBM."

Ji-Young Kim et al. (2022)

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DOI: 10.1109/VLSITECHNOLOGYANDCIR46769.2022.9830160

access: closed

type: Conference or Workshop Paper

metadata version: 2022-08-04

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Ji-Young Kim, Taeryeong Kim, Jeonghyeok You, Ki-Ryong Kim, Byoung-Mo Moon, Kyomin Sohn, Seong-Ook Jung:
A Low Power TSV I/O with Data Rate up to 10 Gb/s for Next Generation HBM. VLSI Technology and Circuits 2022: 152-153

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