"A 65nm Silicon-on-Thin-Box (SOTB) Embedded 2T-MONOS Flash Achieving 0.22 ..."

Ken Matsubara et al. (2019)

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DOI: 10.23919/VLSIC.2019.8778078

access: closed

type: Conference or Workshop Paper

metadata version: 2019-08-05

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Ken Matsubara, Tsutomu Nagasawa, Yoshinobu Kaneda, Hidenori Mitani, Hiroshi Sato, Takashi Iwase, Yasunobu Aoki, Keiichi Maekawa, Hideaki Yamakoshi, Takashi Ito, Hiroyuki Kondo, Takashi Kono:
A 65nm Silicon-on-Thin-Box (SOTB) Embedded 2T-MONOS Flash Achieving 0.22 pJ/bit Read Energy with 64 MHz Access for IoT Applications. VLSI Circuits 2019: 202-

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