"Enhancement of HfO2 Based RRAM Performance Through Hexagonal Boron Nitride ..."

Yi-Shao Chen et al. (2018)

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DOI: 10.1109/NVMTS.2018.8603102

access: closed

type: Conference or Workshop Paper

metadata version: 2024-10-06

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Yi-Shao Chen, Zongwei Wang, Zhihong Zhang, Li Wang, Yichen Fang, Jen-Chung Lou, Kaihui Liu, Jintong Xu, Yimao Cai, Ru Huang:
Enhancement of HfO2 Based RRAM Performance Through Hexagonal Boron Nitride Interface Layer. NVMTS 2018: 1-3

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