"Strained Ge Channels with High Hole Mobility Grown on Si Substrates by ..."

E. Sigle et al. (2021)

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DOI: 10.23919/MIPRO52101.2021.9597145

access: closed

type: Conference or Workshop Paper

metadata version: 2024-10-06

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E. Sigle, David Weißhaupt, Michael Oehme, Hannes S. Funk, Daniel Schwarz, Fritz Berkmann, Jörg Schulze:
Strained Ge Channels with High Hole Mobility Grown on Si Substrates by Molecular Beam Epitaxy. MIPRO 2021: 40-44

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