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ORCIDHannes S. Funk
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2020 – today
- 2021
[c10]Hannes S. Funk, David Weißhaupt, Daniel Schwarz
, D. Bloos, Joris van Slageren, Jörg Schulze:
Characterization of Fe Micromagnets for Semiconductor Spintronics by In-Field Magnetic Force Microscopy. MIPRO 2021: 31-35- [c9]E. Sigle, David Weißhaupt, Michael Oehme, Hannes S. Funk, Daniel Schwarz, Fritz Berkmann, Jörg Schulze:
Strained Ge Channels with High Hole Mobility Grown on Si Substrates by Molecular Beam Epitaxy. MIPRO 2021: 40-44 - [c8]David Weißhaupt, Hannes S. Funk, Christoph Sürgers, Gerda Fischer, Michael Oehme, Daniel Schwarz, Inga A. Fischer, Joris van Slageren, Jörg Schulze:
Formation of Mn5Ge3 on a Recess-Etched Ge (111) Quantum-Well Structure for Semiconductor Spintronics. MIPRO 2021: 45-49 - [c7]Daniel Schwarz, Sören Schäfer, Lukas Seidel, Hannes S. Funk, David Weißhaupt, Michael Oehme, V. Schlykow, V. Kiyek, Dan Buca, Jörg Schulze:
MBE-Grown Ge0.92Sn0.08 Diode on RPCVD-Grown Partially Relaxed Virtual Ge0.92Sn0.08 Substrate. MIPRO 2021: 50-54 - [c6]Lukas Seidel, Daniel Schwarz, Michael Oehme, A. Causevic, Hannes S. Funk, David Weißhaupt, Fritz Berkmann, Jörg Schulze:
Electrical Characterization of SiGeSn/Ge/GeSn-pin-Heterodiodes at Low Temperatures. MIPRO 2021: 55-59 - 2020
- [c5]A. Causevic, Hannes S. Funk, Daniel Schwarz, K. Guguieva, Jörg Schulze:
Processing sequence for a PureB bipolar junction transistor. MIPRO 2020: 13-16 - [c4]Marco M. Dettling, David Weißhaupt, Hannes S. Funk, Michal Kern, Fritz Berkmann, Caterina J. Clausen, Michael Oehme, Daniel Schwarz, Joris van Slageren, Jörg Schulze:
Carrier mobilities in heavily doped pseudomorphic Ge1-x Snx-epilayers. MIPRO 2020: 17-21
2010 – 2019
- 2019
- [c3]Mathias C. J. Weiser, Daniel Schwarz, Hannes S. Funk, David Weißhaupt, C. Serra, Jörg Schulze, Stefano Chiussi:
Fabrication of GePb-Alloys by Means of Pulsed Laser Induced Epitaxy. MIPRO 2019: 1-6 - [c2]P. Povolni, Daniel Schwarz, Caterina J. Clausen, Yasmine Elogail, Hannes S. Funk, Michael Oehme, David Weißhaupt, Jörg Schulze:
Electrical Characterization of Fabricated pin Diodes made from SixGe1-x-ySny with an Embedded Ge1-xSnx Quantum Well. MIPRO 2019: 7-12 - 2017
- [c1]Hannes S. Funk, J. Ng, N. Kamimura, Y.-H. Xie, Jörg Schulze:
Local growth of graphene on Cu and Cu0.88Ni0.12 foil substrates. MIPRO 2017: 31-36
Coauthor Index
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