"Testing for aging in advanced SRAM: From front end of the line transistors ..."

Zhe Zhang et al. (2024)

> Home

Details and statistics

DOI: 10.1109/ITC51657.2024.00017

access: closed

type: Conference or Workshop Paper

metadata version: 2024-12-10

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - conf/itc/ZhangMWWTNTHZ24
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/conf/itc/ZhangMWWTNTHZ24
Zhe Zhang, Mahta Mayahinia, Christian Weis, Norbert Wehn, Mehdi B. Tahoori, Sani R. Nassif, Grigor Tshagharyan, Gurgen Harutyunyan, Yervant Zorian:
Testing for aging in advanced SRAM: From front end of the line transistors to back end of the line interconnects. ITC 2024: 46-50

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.