"A Sub-200mV 6T SRAM in 0.13μm CMOS."

Bo Zhai et al. (2007)

> Home

Details and statistics

DOI: 10.1109/ISSCC.2007.373429

access: closed

type: Conference or Workshop Paper

metadata version: 2018-07-31

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - conf/isscc/ZhaiBSH07
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/conf/isscc/ZhaiBSH07
Bo Zhai, David T. Blaauw, Dennis Sylvester, Scott Hanson:
A Sub-200mV 6T SRAM in 0.13μm CMOS. ISSCC 2007: 332-606

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.