"Modeling of a floating-gate EEPROM cell using a charge sheet approach ..."

Rachid Bouchakour et al. (2001)

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DOI: 10.1109/ISCAS.2001.922364

access: closed

type: Conference or Workshop Paper

metadata version: 2021-06-04

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  - conf/iscas/BouchakourHCBM01
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Rachid Bouchakour, Nadia Harabech, Pierre Canet, Philippe Boivin, Jean Michel Mirable:
Modeling of a floating-gate EEPROM cell using a charge sheet approach including variable tunneling capacitance and polysilicon gate depletion effect. ISCAS (4) 2001: 822-825

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