default search action
"Fringe Gate Leakage of 28nm HK/MG nMOSFETs with Nitridation Treatments."
De-Cheng Zhang et al. (2020)
- De-Cheng Zhang, Ching-Chuan Chou, Ho-Hsiang Chen, Shang-Ze Chen, Jian-Ming Chen, Hui-Yun Bor, Wen-How Lan, Mu-Chun Wang:
Fringe Gate Leakage of 28nm HK/MG nMOSFETs with Nitridation Treatments. ICKII 2020: 1-3
manage site settings
To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.