"New Ge-gate IR Phototransistor based on Doping Engineering Aspect: ..."

Fayçal Djeffal, Hichem Ferhati (2022)

> Home

Details and statistics

DOI: 10.1109/CCE56709.2022.9976023

access: closed

type: Conference or Workshop Paper

metadata version: 2023-01-06

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - conf/iceee/DjeffalF22a
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/conf/iceee/DjeffalF22a
Fayçal Djeffal, Hichem Ferhati:
New Ge-gate IR Phototransistor based on Doping Engineering Aspect: Photodetection Properties and Circuit Level Investigation. CCE 2022: 1-4

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.