"Study of SiO2 thickness effect on insertion loss of CMOS 60 GHz band pass ..."

Nessim Mahmoud et al. (2015)

> Home

Details and statistics

DOI: 10.1109/ICECS.2015.7440292

access: closed

type: Conference or Workshop Paper

metadata version: 2024-10-06

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - conf/icecsys/MahmoudBEEAP15
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/conf/icecsys/MahmoudBEEAP15
Nessim Mahmoud, Adel Barakat, Anwer S. Abd El-Hameed, Adel B. Abd El-Rahman, Ahmed Allam, Ramesh K. Pokharel:
Study of SiO2 thickness effect on insertion loss of CMOS 60 GHz band pass filter. ICECS 2015: 237-239

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.