"Latchup-reliability Impact of High-Voltage nLDMOSs with the Parasitic ..."

Ting-En Lin et al. (2024)

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DOI: 10.1109/ICCE-TAIWAN62264.2024.10674490

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type: Conference or Workshop Paper

metadata version: 2024-11-27

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Ting-En Lin, Shen-Li Chen, Xiu-Yuan Yang, Hung-Wei Chen, Yi-Mu Lee:
Latchup-reliability Impact of High-Voltage nLDMOSs with the Parasitic Schottky Area Modulation in the Source Side. ICCE-Taiwan 2024: 791-792

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