"ESD-capability Influences of UHV Circular nLDMOS Transistors by the ..."

Tien-Yu Lan et al. (2020)

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DOI: 10.1109/ICCE-TAIWAN49838.2020.9258042

access: closed

type: Conference or Workshop Paper

metadata version: 2021-11-24

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Tien-Yu Lan, Shen-Li Chen, Sheng-Kai Fan, Po-Lin Lin, Yu-Jie Zhou, Shi-Zhe Hong, Hung-Wei Chen:
ESD-capability Influences of UHV Circular nLDMOS Transistors by the Drain-side Ladder-step STI. ICCE-TW 2020: 1-2

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