"ESD Capability Analysis of High-voltage nLDMOSs by the Bulk Terminal ..."

Jhong-Yi Lai et al. (2022)

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DOI: 10.1109/ICCE-TAIWAN55306.2022.9869178

access: closed

type: Conference or Workshop Paper

metadata version: 2022-09-09

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Jhong-Yi Lai, Shen-Li Chen, Zhi-Wei Liu, Xing-Chen Mai, Yu-Jie Chung:
ESD Capability Analysis of High-voltage nLDMOSs by the Bulk Terminal Modulation. ICCE-TW 2022: 71-72

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