"Channel- & Drift Region's STI-Lengths Impacts of ESD Immunity in HV 60 ..."

Sheng-Kai Fan et al. (2019)

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DOI: 10.1109/ICCE-TW46550.2019.8991809

access: closed

type: Conference or Workshop Paper

metadata version: 2021-11-25

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Sheng-Kai Fan, Shen-Li Chen, Yu-Lin Jhou, Pei-Lin Wu, Po-Lin Lin:
Channel- & Drift Region's STI-Lengths Impacts of ESD Immunity in HV 60 V nLDMOS Devices. ICCE-TW 2019: 1-2

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