"Anti-ESD impacts on 60-V P-channel LDMOS devices as none-ODs zone ..."

Shen-Li Chen et al. (2015)

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DOI: 10.1109/ICCE-TW.2015.7216890

access: closed

type: Conference or Workshop Paper

metadata version: 2021-11-26

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Shen-Li Chen, Shawn Chang, Yu-Ting Huang, Shun-Bao Chang:
Anti-ESD impacts on 60-V P-channel LDMOS devices as none-ODs zone inserting in the bulk region. ICCE-TW 2015: 266-267

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