"Notched gate MOSFET for capacitance reduction in RF SOI technology."

Lucas Antunes Tambara et al. (2023)

> Home

Details and statistics

DOI: 10.1109/DTTIS59576.2023.10348288

access: closed

type: Conference or Workshop Paper

metadata version: 2024-10-06

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - conf/dttis/TambaraMAMDGBDWDGCJBRF23
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/conf/dttis/TambaraMAMDGBDWDGCJBRF23
Lucas Antunes Tambara, Pascal Masson, Julien Amouroux, Stéphane Monfray, Julien Dura, Frederic Gianesello, Julien Babic, Romain Debroucke, Loic Welter, Siddhartha Dhar, Bernadette Gros, Clement Charbuillet, Franck Julien, Guillaume Bertrand, Arnaud Régnier, Alain Fleury:
Notched gate MOSFET for capacitance reduction in RF SOI technology. DTTIS 2023: 1-4

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.