"Low Hysteresis MoS2-FET Enabled by CVD-Grown h-BN Encapsulation."

Agata Piacentini et al. (2021)

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DOI: 10.1109/DRC52342.2021.9467236

access: closed

type: Conference or Workshop Paper

metadata version: 2024-06-17

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Agata Piacentini, Daniel Schneider, Martin Otto, Bárbara Canto, Zhenyu Wang, Aleksandra Radenovic, Andras Kis, Max Christian Lemme, Daniel Neumaier:
Low Hysteresis MoS2-FET Enabled by CVD-Grown h-BN Encapsulation. DRC 2021: 1-2

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