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2020 – today
- 2023
[c9]Agata Piacentini, Dmitry K. Polyushkin, Burkay Uzlu, Annika Grundmann, Michael Heuken, Holger Kalisch, Andrei Vescan, Thomas Mueller, Max Christian Lemme, Daniel Neumaier:
Flexible CMOS electronics based on 2D p-type WSe2 and n-type MoS2. DRC 2023: 1-2- 2021
- [c8]Agata Piacentini, Daniel Schneider, Martin Otto, Bárbara Canto, Zhenyu Wang, Aleksandra Radenovic, Andras Kis, Max Christian Lemme, Daniel Neumaier:
Low Hysteresis MoS2-FET Enabled by CVD-Grown h-BN Encapsulation. DRC 2021: 1-2 - [c7]Daniel S. Schneider, Eros Reato, Leonardo Lucchesi, Zhenyu Wang, Agata Piacetini, Jens Bolten, Damiano Marian, Enrique G. Marin, Aleksandra Radenovic, Zhenxing Wang, Gianluca Fiori, Andras Kis, Giuseppe Iannaccone, Daniel Neumaier, Max Christian Lemme:
MoS2/graphene Lateral Heterostructure Field Effect Transistors. DRC 2021: 1-2 - 2020
- [c6]Sebastian Lukas
, Satender Kataria, Maximilian Prechtl, Oliver Hartwig, Alexander Meledin, Joachim Mayer, Daniel Neumaier, Georg S. Duesberg, Max Christian Lemme:
Correlation of Material Structure and Electronic Properties in 2D Platinum-Diselenide-based Devices. DRC 2020: 1-2
2010 – 2019
- 2019
- [c5]Daniel S. Schneider, Annika Grundmann, Andreas Bablich, Vikram Passi, Satender Kataria, Holger Kalisch, Michael Heuken, Andrei Vescan, Daniel Neumaier, Max Christian Lemme:
High-Responsivity Flexible Photodetectors based on MOVPE-MoS2. DRC 2019: 175-176 - [c4]Chun-Yu Fan, Muh-Dey Wei, Peco Gjurovski, Mohamed Saeed Elsayed, Ahmed Hamed, Renato Negra, Burkay Uzlu, Zhenxing Wang, Daniel Neumaier:
Concept for a 16-QAM RF Transmitter on Flexible Substrate using a Graphene Technology. ICECS 2019: 93-94 - 2018
- [c3]Himadri Pandey, M. Shaygan, Simon Sawallich, Satender Kataria, Martin Otto, Zhenxing Wang, Michael Nagel, Daniel Neumaier, Max Christian Lemme:
All CVD Boron Nitride Encapsulated Graphene FETs. DRC 2018: 1-2 - [c2]Inessa Bolshakova, Yaroslav Kost, Maxym Radishevskiy, Fedir Shurigin, Oleksandr Vasyliev, Maxim Bulavin, Sergey Kulikov, Ivan Duran, Daniel Neumaier, M. Otto, Zhenxing Wang, Antonio Quercia, V. Coccorese, Alfredo Pironti:
Methods and Equipment for On-Line Testing of Hall Sensors Based on Semiconductor, Metal and Graphene Materials in the Nuclear Reactors' Neutron Fluxes. IEEE SENSORS 2018: 1-4 - [c1]Daniel Schall, Emiliano Pallecchi, Guillaume Ducournau, Vanessa Avramovic, Martin Otto, Daniel Neumaier:
Record High Bandwidth Integrated Graphene Photodetectors for Communication Beyond 180 Gb/s. OFC 2018: 1-3
Coauthor Index
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